米线

The parameters, thermodynamics of reaction process and the growth mechanism of SiC nanowires were investigated.

研究了影响碳热还原制备SiC纳米线的工艺参数，反应过程热力学并提出了SiC纳米线的生长机理。

In tubular furnace, high quality GaN nanowires were synthesized by ammoniation at 1000 ℃.

在一两端开口的管式炉中，用简单的氨化法，在1000℃合成出大量高质量的氮化镓纳米线。本文选用氧化镓和氨气为原料，氧化铟为催化剂合成氮化镓纳米线。

At the same time, modulation voltage of PST thin film sputtered on TiSi nanowires/ Ti5Si3 thin film electrode decreases by about nine times at the same condition because of large fringing electric field generated by TiSi nanowires, and tunability improves by one time.

同时，在TiSi纳米线/Ti5Si3薄膜电极上制备的PST薄膜受纳米线产生的强大边缘电场的作用，其介电调制电压降低了约9倍，介电可调性提高约一倍。