mocvd的用法

at last, we simulate benard convection within the mocvd reactor. it is found that the critical ra number is larger than predicted by current theory.

文章最后还模拟了MOCVD反应器内的Benard对流，发现发生Benard对流的临界Ra数大于理论预期值，其原因可能是由于模拟条件并非纯自然对流，反应腔内强迫对流依然发挥一定作用的缘故。

Optimum Structural Design for QW Laser Material and Grown by MOCVD

MOCVD生长量子阱激光器材料及结构的优化设计

Curve Analysis of Real-time Interference in GaN Film Growth by MOCVD

MOCVD生长GaN薄膜的实时干涉曲线分析