c-v的翻译

The substrate temperature has great influence on the properties of both the SiO_2 films and the SiO_2/ Si interface. The fixed charge density of the SiO_2-Si system is estimated from the C-V curve, the minimum value is about 1.73 × 10 10 cm-2.

SiO2薄膜中固定氧化物电荷密度受衬底温度影响较大，其最小值可达1.73×1010cm-2。

The density of oxide fixed charge N_f and the density of trapping states N(?) at the interface between the A, laser-recrystallized polycrystalline silicon layer and the underlying oxide layer have been studied by high frequency and quasi-static state C-V technigues.

我们用常规的高频和准静态C-V技术测量了氩离子激光再结晶多晶硅/二氧化硅界面的氧化物固定电荷密度N f和界面态陷阱密度N（it）。

This design got the dc characteristic and C-V characteristic curve, forecasted the high frequency characteristics, and analyzed the influence of the main parameters driven on the device characteristics deeply.

本设计得到了该器件的直流特性和C-V特性曲线，预测了器件的高频特性，并深入地分析了各重要参数对器件特性的影响。