ohmic助记

Research on Etching GaN 、 P-type Ohmic Contact and Fabrication of GaN LED

GaN的刻蚀、P型欧姆接触以及LED的研究

US/ VIS spectrophotometer of the product film has showed that it has a higher transmissivity than an ITO film in ultra violet region. Upon characteristics test, a-Si/ Ti interface has been found to approximate an ohmic contact.

利用US／VIS分光光度计测试了生成物的透过率，发现其透过率在紫外较ITO膜提高，测量了a－Si／Ti界面特性近似为欧姆接触。

Appropriate amount of Co_3O_4 will greatly enhance the catalytic activity of RuO_2-TiO_2 ( 60)/ Ti anode for chlorine evolution, and reduce the ohmic drop in anodic coating obviously.

适量Co3O4可以大大提高RuO2-TiO2（60）/Ti阳极的析氯催化活性，明显减小涂层欧姆降。