hydrofluoric

Porous silicon layers of different thickness and porosities are obtained using anodization method via controlling the hydrofluoric acid concentration, current density and time. The thick porous silicon layers are oxidized by a two-step oxidation method.

实验过程中通过控制阳极氧化反应中HF溶液的浓度、电流密度和反应时间形成了不同厚度和孔隙度的多孔硅厚膜，并采用两步氧化的方法得到氧化多孔硅厚膜。

The growth time and anode oxidize velocity control the thickness and porosity. Porous silicon layers were formed by anodization of Si wafers in hydrofluoric ( HF) solu-tion.

通过在阳极氧化反应中采用不同的HF溶液的浓度、电流密度和反应时间来控制多孔硅的膜厚、孔隙度等特性。

Steel samples were dissolved with nitric acid, hydrochloric acid and hydrofluoric acid by electrothermal heating or microwave digestion.

钢铁样品用硝酸、盐酸、氢氟酸在电热板上加热或微波消解，溶液经稀释后未经基体分离，未加内标直接用电感耦合等离子体质谱法（ICP-MS）测定。