LD50的音标

Through the analysis of the loss and threshold characteristics of a laser diode ( LD), the threshold current density of LD with external feedback is calculated, according to the theory of multi-beam interference and the definition of equivalent reflection factor.

通过对半导体激光器（LD）的损耗和阈值电流特性的分析，引入等效反射系数的概念，根据多光束干涉的原理，导出了在外腔反馈作用下LD的阈值电流公式。

The InGaAs/ GaAs strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high COD limit, which make Ld lasers achieve higher output power and longer Ufe.

InGaAs/GaAs应变量子阱激光器具有级低的阈值电流密度、较高的特性温度和较高的光学灾变损伤阈值，这使得激光器具有更高的输出功率和更长的寿命。

Therefore, based on the consideration of both photocurrent increase factor due to transient ionization effects and threshold current density decrease factor due to displacement effects, we obtain an integrated LD optical response model of radiation effect.

因此，在综合考虑了瞬态电离效应的光电流增加因素和位移效应的阈值电流密度衰减因素的基础上，获得了LD辐射效应综合光学响应模型。